| The semiconductor material InAlAs has attracted intensive attention in both academic field and industrial application for its physical properties. In this work, the detailed study of the carrier dynamics of InAlAs random alloy and phonon scattering in InAs/AlAs short-period superlattice (SPS) was conducted based on different spectroscopy techniques, including photoluminescence (PL) spectroscopy, Raman scattering, time-resolved PL (TRPL) and x-ray diffraction (XRD). For the In composition engineered InAlAs random alloy, three distinct peaks were detected in the low-temperature PL spectra and the localization effect was analyzed quantitatively by adopting the localized-state ensemble (LSE) model. As to the InAs/AlAs superlattice, room temperature Raman spectra were conducted for both growth temperature dependent and period-number dependent samples. According to the Raman peak position and full width at half maximum (FWHM), the strain and quantum confinement effect were studied. Moreover, the thickness of the layers in superlattices can be estimated based on the interface (IF) phonon mode found in between the longitudinal optical (LO) and transverse optical (TO) phonon modes. The findings of this research work may provide useful information for future applications of InAlAs in infrared photodetectors. |
