Name
Kechao Lu
Major
Materials Science / Physics
Class
2024
About
| Raman Spectroscopy Investigation of Laminated Relaxation and Pseudomorphic Layer in Si0.4Ge0.6 Films Grown on (001) Si Substrates by Kechao Lu |
| Raman Spectroscopy Investigation of Laminated Relaxation and Pseudomorphic Layer in Si0.4Ge0.6 Films Grown on (001) Si Substrates by Kechao Lu |
| In this study, the laminated relaxation process and the pseudomorphic layer in the Si0.4Ge0.6 films grown on (001) Si substrates are studied by Raman spectroscopy. The films range from 20 nm to 1200 nm in thickness and reveal biaxial strains through room temperature (300K) Raman peak analysis. Notably, a highly strained layer is identified in the 30 nm sample, confirming the pseudomorphic layer. Quantum confinement-induced peak broadening at 30 nm suggests dense dislocations at the substrate-pseudomorphic layer interface. Temperature-dependent Raman measurements demonstrate that the strain has limited influences on the thermal expansion behavior of the SiGe under a low-temperature range. These findings contribute to the understanding of the SiGe alloy growth, enhancing the fabrication of intricate SiGe-based devices with improved strain control and relaxation dynamics. |
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